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BF998R Просмотр технического описания (PDF) - NXP Semiconductors.

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BF998R
NXP
NXP Semiconductors. NXP
BF998R Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Ptot
Tstg
Tj
PARAMETER
CONDITIONS
MIN.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1
up to Tamb = 50 C; see Fig.3; note 2
total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1
storage temperature
65
operating junction temperature
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
2. Device mounted on a printed-circuit board.
MAX.
12
30
10
10
200
200
200
+150
150
UNIT
V
mA
mA
mA
mW
mW
mW
C
C
handbook, halfpage
200
Ptot max
(mW)
(2)
(1)
100
MLA198
handbook, halfpage
200
Ptot max
(mW)
100
MGA002
0
0
100
Tamb (oC)
200
(1) Ceramic substrate.
(2) Printed-circuit board.
Fig.3 Power derating curves; BF998.
0
0
100
200
Tamb (°C)
Fig.4 Power derating curve; BF998R.
1996 Aug 01
3
 

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