HM5212325FBPC Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM5212325FBPC

128M LVTTL interface SDRAM 100 MHz 1-Mword ×32-bit ×4-bank PC/100 SDRAM

Hitachi -> Renesas Electronics 

HM5212325FBPC-B60

DC Characteristics

(Tcase = 0 to +70°C [Tj max = 110°C]), VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

Operating current

(CAS latency = 2)

(CAS latency = 3)

Standby current in power down

HM5212325F

-B60

Symbol Min

Max

I CC1

—

I CC1

—

I CC2P

—

100

110

6

Standby current in power down ICC2PS

—

4

(input signal stable)

Standby current in non power

I CC2N

—

32

down

Standby current in non power

I CC2NS

—

18

down (input signal stable)

Active standby current in power ICC3P

—

8

down

Active standby current in power ICC3PS

—

6

down (input signal stable)

Active standby current in non

I CC3N

—

40

power down

Active standby current in non

I CC3NS

—

30

power down (input signal stable)

Burst operating current

(CAS latency = 2)

(CAS latency = 3)

Refresh current

Self refresh current

I CC4

—

I CC4

—

I CC5

—

I CC6

—

110

135

190

2

Self refresh current (L-version) ICC6

—

0.8

Input leakage current

I LI

–2

2

Output leakage current

I LO

–3

3

Output high voltage

Output low voltage

VOH

2.4

—

VOL

—

0.4

Unit

mA

mA

mA

mA

Test conditions

Burst length = 1

tRC = min

CKE = VIL,

tCK = 12 ns

CKE = VIL, tCK = ∞

Notes

1, 2, 3

6

7

mA CKE, CS = VIH,

4

tCK = 12 ns

mA CKE = VIH, tCK = ∞ 9

mA CKE = VIL,

tCK = 12 ns

1, 2, 6

mA CKE = VIL, tCK = ∞ 2, 7

mA CKE, CS = VIH,

tCK = 12 ns

1, 2, 4

mA CKE = VIH, tCK = ∞ 2, 9

mA tCK = min, BL = 4

mA

mA tRC = min

mA VIH ≥ VCC – 0.2 V

VIL ≤ 0.2 V

mA

µA 0 ≤ Vin ≤ VCC

µA 0 ≤ Vout ≤ VCC

DQ = disable

V

IOH = –4 mA

V

IOL = 4 mA

1, 2, 5

3

8

7

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