HN29W12811 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W12811

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Hitachi -> Renesas Electronics 

HN29W12811 Series

HN29W12811

-60

Parameter

Symbol Min Typ Max Unit Test conditions

Notes

RES high to device ready

t BSY

——1

ms

CE pulse high time

t CPH

200 — — ns

CE, WE setup time for RES

t CWRS

0

— — ns

RES to CE, WE hold time

t CWRH

0

— — ns

SC setup for WE

t SW

50 — — ns

CE hold time for OE

t COH

0

— — ns

SA (2) to CA (2) delay time

t SCD

— — 30 µs

RDY/Busy setup for SC

t RS

200 — — ns

Time to device busy on read mode tDBR

——1

µs

Busy time on reset mode

t RBSY

— 45 — µs

Notes: 1. tDF is a time after which the I/O pins become open.

2. tWSD (min) is specified as a reference point only for SC, if tWSD is greater than the specified tWSD (min)

limit, then access time is controlled exclusively by tSAC.

20

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