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HN29W12811T

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Hitachi -> Renesas Electronics 

HN29W12811 Series

DC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)

Parameter

Symbol Min

Typ Max

Unit Test conditions

Input leakage current

I LI

—

—2

µA Vin = VSS to VCC

Output leakage current

I LO

—

—2

µA Vout = VSS to VCC

Standby VCC current

I SB1

—

0.3 1

mA CE = VIH

I SB2

—

30 50

µA CE = VCC ± 0.2 V,

RES = VCC ± 0.2 V

Deep standby VCC current

I SB3

—

1

5

µA RES = VSS ± 0.2 V

Operating VCC current

I CC1

—

5

20

mA Iout = 0 mA, f = 0.2 MHz

I CC2

—

20 40

mA Iout = 0 mA, f = 20 MHz

Operating VCC current (Program) ICC3

—

20 40

mA In programming

Operating VCC current (Erase) ICC4

—

20 40

mA In erase

Input voltage

VIL

–0.3*1, 2 —

0.8

V

VIH

2.0

—

VCC + 0.3*3 V

Input voltage (RES pin)

VILR

–0.2

— 0.2

V

VIHR

VCC – 0.2 —

VCC + 0.2 V

Output voltage

VOL

—

— 0.4

V

IOL = 2 mA

VOH

2.4

——

V

IOH = –2 mA

Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns in the read operation. VIL min = –2.0 V for pulse width ≤ 20

ns in the read operation.

2. VIL min = –0.6 V for pulse width ≤ 20 ns in the erase/data programming operation.

3. VIH max = VCC + 1.5 V for pulse width ≤ 20 ns. If VIH is over the specified maximum value, the

operations are not guaranteed.

AC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)

Test Conditions

• Input pulse levels: 0.4 V/2.4 V

• Input pulse levels for RES: 0.2 V/VCC – 0.2 V

• Input rise and fall time: 5 ns

• Output load: 1 TTL gate + 100 pF (Including scope and jig.)

• Reference levels for measuring timing: 0.8 V, 1.8 V

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