HN29W12811T Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W12811T

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Hitachi -> Renesas Electronics 

HN29W12811 Series

128M AND type Flash Memory

More than 8,029-sector (135,657,984-bit)

ADE-203-1183C (Z)

Rev. 2.0

Feb. 7, 2001

Description

The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has

fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase

is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all

sector address).

Features

• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V

• Organization

 AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)

 Data register: (2048 + 64) bytes

• Multi-level memory cell

 2 bit/per memory cell

• Automatic programming

 Sector program time: 2.5 ms (typ)

 System bus free

 Address, data latch function

 Internal automatic program verify function

 Status data polling function

• Automatic erase

 Single sector erase time: 1.0 ms (typ)

 System bus free

 Internal automatic erase verify function

 Status data polling function

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