Philips Semiconductors
QIC read-write amplifier
Preliminary specification
TZA1000
CHARACTERISTICS
VDD1 = VDD2 = 5 V ±5%; VDD3 = 12 V ±5%; Tamb = 25 °C ±5%; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
VDD1
VDD2
read circuit supply voltage
FB and write circuit supply
voltage
4.5
5.0
4.5
5.0
VDD3
sense current circuit supply
voltage
10.8
12.0
IDD1
read circuit supply current
Rd
Ibias = −10 to +10 mA −
31
Wr
Iwrite = 30 mA
−
70
IDD2
FB and write circuit supply
current
Rd
max gain
−
38
Wr
−
36
IDD3
sense current circuit supply Isense = 16 mA
15.0
16.2
current
Vref
reference voltage
pin 20; IO = 0 to 3 mA 1.9
2.0
I20
current on pin 20 (Vref)
source
−
−
sink
−
−
V21
voltage at pin 21 (Iref)
1.2
1.3
Iref
reference current (pin 21)
1
3
Read section
Gv(pa)
preamplifier voltage gain
PG1 = 1; PG0 = 1
37
38.6
PG1 = 0; PG0 = 1
32
32.7
PG1 = 1; PG0 = 0
3
4.1
Gv(agc)
∆Gv(agc)
AGC amplifier voltage gain G6DB = 1; G = 15;
23
24.4
note 1
AGC voltage gain control
range
note 2
−
22
Gv(yoke)
yoke amplifier voltage gain
19
fcoupling
−3 dB AC coupling frequency input to output
2
f−3dB(cutoff)(HPF) HPF −3 dB cut-off frequency FC1 = FC1 = 0
−
FC1 = 0; FC1 = 1
−
FC1 = 1; FC1 = 0
−
FC1 =FC1 = 1
−
f−3dB(cutoff)(LPF) LPF −3 dB cut-off frequency FC1 = FC1 = 0
−
FC1 = 0; FC1 = 1
−
FC1 = 1; FC1 = 0
−
FC1 =FC1 = 1
−
Vn(i)(eq)(preamp) equivalent input noise voltage: Zsource = 0 Ω
−
preamplifier
21
5
1.0
2.0
4.7
10
1.1
2
4.3
11
0.65
MAX.
5.5
5.5
UNIT
V
V
13.2
V
−
mA
−
mA
−
mA
−
mA
19.0
mA
2.1
V
3.0
mA
50
µA
1.4
V
5
mA
41
dB
34
dB
6
dB
26
dB
−
dB
23
dB
10
kHz
−
MHz
−
MHz
−
MHz
−
MHz
−
MHz
−
MHz
−
MHz
−
MHz
0.8
nV/√Hz
1998 Mar 17
14