CP151D Просмотр технического описания (PDF) - STMicroelectronics
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CP151D Datasheet PDF : 7 Pages
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1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C)
Symbol
Test conditions
VF
IF=5A
tp=500µs
VFP 10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV Rp=10Ω
2/10µs 2.5kV Rp=62Ω
(see note 1)
Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card.
Maximum
3
5
7
12
LCP1511D
Unit
V
V
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Sym-
bol
Test conditions
Min.
Max.
Unit
IGT
VGND/LINE = -48V
0.2
5
mA
IH
VGATE =-48V (see note 2)
) VGT
at IGT
t(s IRG
Tc=25°C VRG =-75V
c Tc=70°C VRG =-75V
Produ VDGL
VGATE= -48V (see note 3)
10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV Rp=10Ω
2/10µs 2.5kV Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
te Note 2 : See the functional holding current (IH) test circuit 2.
150
mA
2.5
V
5
µA
50
10
V
20
25
Obsole 3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C)
) - Sym-
t(s bol
uc IRM
Test conditions
Tc=25°C VGATE/LINE = -1V
Tc=70°C VGATE/LINE = -1V
VRM =-75V
VRM =-75V
Maximum
5
50
Unit
µA
lete Prod APPLICATION NOTE
ObsoTIP 1 IN
OUT 8 TIP
In order to take advantage of the “4 point” structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
GATE 2
7
GND
tances of the wiring (Ldi/dt), especially for very fast
transients.
NC 3
6
RING 4 IN
OUT 5 RING
3/7
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