CP151D Просмотр технического описания (PDF) - STMicroelectronics
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CP151D Datasheet PDF : 7 Pages
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LCP1511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
IPP Peak pulse current
(see note 1)
10/1000µs
30
A
5/310µs
38
2/10µs
170
ITSM Non repetitive surge peak on-state current
tp = 10ms
8
A
(F = 50Hz)
t = 1s
3.5
IGSM Maximum gate current (half sine wave tp = 10ms)
2
A
VMLG Maximum voltage LINE / GROUND
VMGL Maximum voltage GATE / LINE
-100
V
-80
Tstg Storage temperature range
Tj Maximum junction temperature
- 55 to + 150
°C
150
TL Maximum lead temperature for soldering during 10s
260
°C
Note 1 : Pulse waveform :
) 10/1000µs tr=10µs
t(s 5/310µs
tr=5µs
c 2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
lete Produ THERMAL RESISTANCE
so Symbol
Ob Rth (j-a) Junction to ambient
Parameter
ct(s) - ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
du Symbol
Parameter
ro IGT Gate triggering current
P IH Holding current
te IRM Reverse leakage current LINE/GND
ole IRG Reverse leakage current GATE/LINE
sVRM Reverse voltage LINE/GND
ObVF Forward drop voltage LINE/GND
% I PP
100
50
0
tr
tp
Value
170
t
Unit
°C/W
I
IF
VGATE VRM
IRMVF
VLG
VGT Gate triggering voltage
IH
VFP Peak forward voltage LINE/GND
VDGL Dynamic switching voltage GATE/LINE
VGATE GATE/GND voltage
VLG LINE/GND voltage
C Off-state capacitance LINE/GND
IPP
2/7
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