CP151D(1998) Просмотр технического описания (PDF) - STMicroelectronics
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CP151D Datasheet PDF : 7 Pages
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LCP1511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter
IPP Peak pulse current
(see note 1)
10/1000µs
5/310µs
2/10µs
ITSM Non repetitive surge peak on-state current
(F = 50Hz)
tp = 10ms
t = 1s
IGSM Maximum gate current (half sine wave tp = 10ms)
VMLG Maximum voltage LINE / GROUND
VMGL Maximum voltage GATE / LINE
Tstg Storage temperature range
Tj Maximum junction temperature
TL Maximum lead temperature for soldering during 10s
Value
30
38
170
8
3.5
2
-100
-80
- 55 to + 150
150
260
Unit
A
A
A
V
°C
°C
Note 1 : Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
% IPP
100
50
THERMAL RESISTANCE
Symbol
Rth (j-a) Junction to ambient
Parameter
0
tr
tp
Value
170
t
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
IGT Gate triggering current
IH Holding current
IRM Reverse leakage current LINE/GND
IRG Reverse leakage current GATE/LINE
VRM Reverse voltage LINE/GND
VF Forward drop voltage LINE/GND
VGT Gate triggering voltage
VFP Peak forward voltage LINE/GND
VDGL Dynamic switching voltage GATE/LINE
VGATE GATE/GND voltage
VLG LINE/GND voltage
C Off-state capacitance LINE/GND
2/7
I
IF
VGATEVRM
IRMVF
IH
VLG
IPP
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