STPS2060C Просмотр технического описания (PDF) - STMicroelectronics
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STPS2060C Datasheet PDF : 7 Pages
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STPS2060C
Characteristics
Figure 1.
Conduction losses versus average Figure 2.
current (per diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(AV)(W)
9
8
7
6
5
4
3
2
1
0
0
1
2
δ = 0.05 δ = 0.1
δ = 0.2
IF(AV)(A)
3
4
5
6
7
δ = 0.5
δ=1
T
δ=tp/T
tp
8
9 10 11 12
IF(AV)(A)
11
10
Rth(j-a)=Rth(j-c)
9
8
7
Rth(j-a)=15°C/W
6
5
4
3
T
2
1
δ=tp/T
tp
0
Tamb(°C)
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=110°C
1.E+00
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
3/7
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