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NTE3083

Optoisolator NPN Darlington Transistor Output

NTE Electronics 

Electro–Optical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Emitter (GaAs LED)

Forward Voltage

VF

Reverse Voltage

VR

Junction Capacitance

CJ

Detector (Silicon Photo–Darlington)

IF = 20mA

IR = 10µA

VR = 0V

– 1.15 1.50 V

3.0 25.0 – V

– 50 – pF

Collector Breakdown Voltage

Base Breakdown Voltage

Emitter Breakdown Voltage

Collector Leakage Current

Saturation Voltage

Base Photo–Current

Darlington Gain

Collector–Emitter Capacitance

Switching Times, Coupled

V(BR)CEO IC = 1mA

V(BR)CBO IC = 10µA

V(BR)EBO IE = 10µA

ICEO VCE = 10V

VCE(sat) IC = 2mA, IF = 1mA

IC = 10mA, IF = 5mA

IC = 50mA, IF = 10mA

IB VCB = 5V, IF = 10mA

hFE IB = 1µA, VCE = 1V

CCE VCE = 10V

30 60 – V

30 60 – V

68–V

– 1 100 nA

– 0.8 1.0 V

– 0.8 1.0 V

– 0.9 1.2 V

– 2 – µA

– 50k –

– 6 – pF

Rise Time, Fall Time

TTL Gate Turn–On Time

TTL Gate Turn–Off Time

DC Collector Current Transfer

Ratio

tr, tf VCC = 10V, IC = 10mA, RL = 100Ω – 80 – µs

tON IF = 1mA

– 200 – µs

tOFF IF = 1mA

– 400 – µs

CTR IF = 10mA, VCE = 5V

200 400 – %

Anode 1

Cathode 2

N.C. 3

654

1 23

6 Base

5 Collector

4 Emitter

.070 (1.78) Max

.350 (8.89)

Max

.200 (5.08)

Max

.260

(6.6)

Max

.350

(8.89)

Max

.300 (7.62)

.085 (2.16) Max

.100 (2.54)

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