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NTE3083

Optoisolator NPN Darlington Transistor Output

NTE Electronics 

NTE3083

Optoisolator

NPN Darlington Transistor Output

Description:

The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–

darlington in a 6–Lead DIP type package.

Features:

D High Sensitivity: 1mA on the Input will Sink a TTL gate

D High Isolation: 3550VDC, 1012Ω, 0.5pF

Absolute Maximum Ratings:

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C

Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C

Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW

Derate Linearly to 100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C

Input to Output Isolation Voltage (1sec), VISOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3550VDC

Input Diode

Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA

Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V

Peak Forward Current (1µs pulse, 300pps), IFpeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Output Darlington

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mA

Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Isolation Between Emitter and Detector

Capacitance

Resistance

Voltage Breakdown

Ciso f = 1MHz

Riso V = 500VDC

Viso t = 1sec

– 0.5 – pF

1011 1012 –

Ω

3550 – – VDC

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