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BC237

Amplifier Transistors

ON Semiconductor 

BC237,A,B,C BC238B,C BC239C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µA, VCE = 5.0 V)

BC237A

BC237B/238B

BC237C/238C/239C

hFE

—

—

90

—

—

150

—

—

270

—

(IC = 2.0 mA, VCE = 5.0 V)

BC237

BC237A

BC237B/238B

BC237C/238C/239C

120

—

800

120

170

220

200

290

460

380

500

800

(IC = 100 mA, VCE = 5.0 V)

Collector–Emitter On Voltage

(IC = 10 mA, IB = 0.5 mA)

(IC = 100 mA, IB = 5.0 mA)

Base–Emitter Saturation Voltage

(IC = 10 mA, IB = 0.5 mA)

(IC = 100 mA, IB = 5.0 mA)

Base–Emitter On Voltage

(IC = 100 µA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

(IC = 100 mA, VCE = 5.0 V)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)

BC237A

BC237B/238B

BC237C/238C/239C

—

120

—

—

180

—

—

300

—

VCE(sat)

BC237/BC238/BC239

—

BC237/BC239

—

BC238

V

0.07

0.2

0.2

0.6

0.8

VBE(sat)

—

—

V

0.6

0.83

—

1.05

VBE(on)

—

0.5

0.55

0.62

—

0.83

V

—

0.7

—

BC237

BC238

BC239

fT

MHz

—

100

—

—

120

—

—

140

—

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Collector–Base Capacitance

(VCB = 10 V, IC = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Noise Figure

(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,

f = 1.0 kHz)

(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,

f = 1.0 kHz, ∆f = 200 Hz)

BC237

BC238

BC239

BC239

BC237

BC238

BC239

Figure 1.

150

200

—

150

240

—

150

280

—

Cobo

—

—

4.5

pF

Cibo

—

8.0

—

pF

NF

dB

—

2.0

4.0

—

2.0

10

—

2.0

10

—

2.0

4.0

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