BC237 Просмотр технического описания (PDF) - ON Semiconductor

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BC237

Amplifier Transistors

ON Semiconductor 

ON Semiconductort

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol BC237 BC238 BC239 Unit

Collector–Emitter Voltage

VCEO

45

25

25

Vdc

Collector–Emitter Voltage

VCES

50

30

30

Vdc

Emitter–Base Voltage

VEBO

6.0

5.0

5.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

PD

Derate above 25°C

350

mW

2.8

mW/°C

Total Device Dissipation @ TC = 25°C

PD

Derate above 25°C

1.0

Watts

8.0

mW/°C

Operating and Storage Junction

TJ, Tstg

–55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

BC237,A,B,C

BC238B,C

BC239C

1

2

3

CASE 29–11, STYLE 17

TO–92 (TO–226AA)

COLLECTOR

1

2

BASE

3

EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0 mA, IB = 0)

BC237

BC238

BC239

V(BR)CEO

45

—

—

V

25

—

—

25

—

—

Emitter–Base Breakdown Voltage

(IE = 100 mA, IC = 0)

BC237

BC238

BC239

V(BR)EBO

6.0

—

—

V

5.0

—

—

5.0

—

—

Collector Cutoff Current

(VCE = 30 V, VBE = 0)

BC238

BC239

ICES

—

0.2

15

nA

—

0.2

15

(VCE = 50 V, VBE = 0)

(VCE = 30 V, VBE = 0) TA = 125°C

BC237

BC238

BC239

—

0.2

15

—

0.2

4.0

µA

—

0.2

4.0

(VCE = 50 V, VBE = 0) TA = 125°C

BC237

—

0.2

4.0

© Semiconductor Components Industries, LLC, 2001

1

May, 2001 – Rev. 3

Publication Order Number:

BC237/D

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