FMBA06 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FMBA06

NPN Multi-Chip General Purpose Amplifier

Fairchild Semiconductor 

NPN Multi-Chip General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Base-Emitter Saturation

Voltage vs Collector Current

1 β = 10

0.8

- 40 ºC

25 °C

125 °C

0.6

0.4

0.1

1

10

100

I C - COLLECTOR CURRENT (mA)

1000

Base Emitter ON Voltage vs

Collector Current

1

- 40 ºC

0.8

25 °C

0.6

125 °C

0.4

0.2

VCE = 5V

0

1

10

100

1000

I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current

vs. Ambient Temperature

10

VCB= 80 V

1

0.1

0.01

0.001

25

50

75

100

125

TA - AMBIENT TEMPERATURE ( ºC)

P 33

Collector Saturation Region

2

T A = 25°C

1.5

1

0.5

I C = 1 mA

10 mA

100 mA

0

4000

10000

20000 30000

I B- BASE CURRENT (uA)

50000

Collector-Emitter Breakdown

Voltage with Resistance

Between Emitter-Base

117

116

115

114

113

112

111

0.1

1

10

100

1000

RESISTANCE (k Ω)

Input and Output Capacitance

vs Reverse Voltage

100

f = 1.0 MHz

C ib

10

C ob

1

0.1

0.1

1

10

100

V CE - COLLECTOR VOLTAGE(V)

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