FMBA06 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FMBA06

NPN Multi-Chip General Purpose Amplifier

Fairchild Semiconductor 

NPN Multi-Chip General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Sustaining Voltage*

V(BR)EBO

Emitter-Base Breakdown Voltage

ICEO

Collector-Cutoff Current

ICBO

Collector-Cutoff Current

IC = 1.0 mA, IB = 0

IE = 100 µA, IC = 0

VCE = 60 V, IB = 0

VCB = 80 V, IE = 0

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 10 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V

IC = 100 mA, IB = 10 mA

IC = 100 mA, VCE = 1.0 V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

IC = 10 mA, VCE = 2.0 V,

f = 100 MHz

80

V

4.0

V

0.1 µA

0.1 µA

100

100

0.25 V

1.2

V

150

MHz

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

200

125 °C

VCE = 1V

150

25 °C

100

- 40 ºC

50

0.001

0.01

0.1

I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

0.5

β = 10

0.4

0.3

0.2

0.1

0

0.1

125 °C

25 °C

- 40 ºC

1

10

100

I C - COLLECTOR CURRENT (mA)

1000

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