CPV363M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
RthJC (IGBT)
RthJC (DIODE)
RthCS (MODULE)
Weight of module
-
-
0.10
20
0.7
MAX.
3.5
5.5
-
-
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES (1)
VGE = 0 V, IC = 250 µA
Temperature coeff. of breakdown voltage ΔV(BR)CES/ΔTJ VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
VCE(on)
IC = 6.0 A
IC = 11 A
IC = 6.0 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
VGE(th)
ΔVGE(th)/ΔTJ
gfe (2)
VCE = VGE, IC = 250 µA
VCE = 100 V, IC = 12 A
Zero gate voltage collector current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
Notes
(1) Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
(2) Pulse width 5.0 µs; single shot
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 12 A
IC = 12 A, TJ = 150 °C
See fig. 13
VGE = ± 20 V
MIN.
600
-
-
-
-
3.0
-
3.0
-
-
-
-
-
TYP.
-
0.45
1.72
2.00
1.60
-
- 13
6.0
-
-
1.4
1.3
-
MAX.
-
-
2.10
-
-
6.0
-
-
250
2500
1.7
1.6
± 100
UNITS
V
V/°C
V
mV/°C
S
µA
V
nA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94485
Revision: 01-Sep-08