CPV363M4KPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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CPV363M4KPBF Datasheet PDF : 11 Pages
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IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
CPV363M4KPbF
Vishay High Power Products
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Qg
IC = 6 A
Qge
VCC = 400 V
Qgc
See fig. 8
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tSC
td(on)
tr
td(off)
tf
Ets
TJ = 25 °C
IC = 6.0 A, VCC = 480 V
VGE = 15 V, RG = 23 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
VCC = 360 V, TJ = 125 °C
VGE = 15 V, RG = 23 Ω, VCPK < 500 V
TJ = 150 °C
IC = 6.0 A, VCC = 480 V
VGE = 15 V, RG = 23 Ω
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Cies
Coes
Cres
trr
Diode peak reverse recovery current
Irr
Diode reverse recovery charge
Diode peak rate of fall of recovery
during tb
Qrr
dI(rec)M/dt
VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
See fig. 7
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 14
See fig. 15
See fig. 16
IF = 12 A
VR = 200 V
dI/dt = 200 A/µs
See fig. 17
MIN.
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
61
7.4
27
55
24
107
92
0.28
0.10
0.39
-
54
24
161
244
0.60
740
100
9.3
42
80
3.5
5.6
80
220
180
120
MAX.
91
11
40
-
-
160
140
-
-
0.50
UNITS
nC
ns
mJ
-
µs
-
-
ns
-
-
-
mJ
-
-
pF
-
60
ns
120
6.0
A
10
180
nC
600
-
A/µs
-
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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