PHB45NQ15T Просмотр технического описания (PDF) - Philips Electronics

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PHB45NQ15T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB45NQ15T

N-channel TrenchMOS™ standard level FET

50

IS

VGS = 0 V

(A)

40

30

20

10

175 °C

03ao22

Tj = 25 °C

104

C

(pF)

103

102

03ao23

Ciss

Coss

Crss

0

0

0.3

0.6

0.9

1.2

VSD (V)

10

10-1

1

10

VDS (V) 102

Tj = 25 °C and 175 °C; VGS = 0 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

VGS = 0 V; f = 1 MHz

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

9397 750 14012

Product data sheet

Rev. 01 — 8 November 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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