PHB45NQ15T Просмотр технического описания (PDF) - Philips Electronics
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PHB45NQ15T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB45NQ15T
N-channel TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
max
typ
min
03aa32
10-1
ID
(A)
10-2
10-3
10-4
03aa35
min typ max
1
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
10
VGS
(V)
ID = 25 A
Tj = 25 °C
8
VDS = 30 V
6
03ao24
75 V
120 V
4
2
0
0
10
20
30
40
QG (nC)
ID = 25 A; VDS = 30 V, 75 V and 120 V
Fig 11. Gate-source voltage as a function of gate charge; typical values.
9397 750 14012
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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