FB18N50K   Даташит

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A

Formosa Technology

10 Amp. Glass Passivated Bridge Rectifier

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A

Vishay Semiconductors

Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)

International Rectifier

HEXFET® Power MOSFET

Vishay Semiconductors

Power MOSFET, 190 A

Vishay Semiconductors

Power MOSFET, 190 A

NEC => Renesas Technology

COMPOUND TRANSISTOR

Infineon Technologies

EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC

Infineon Technologies

EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC