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STP11NM60(2003) Даташит - STMicroelectronics

STP11NM60 image

Номер в каталоге
STP11NM60

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  2018   lastest PDF  

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page
12 Pages

File Size
463.7 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

■ TYPICAL RDS(on) = 0.4Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
   CHARGE
■ LOW GATE INPUT RESISTANCE

APPLICATIONS
   The MDmesh™ family is very suitable for increasing
   power density of high voltage converters allowing
   system miniaturization and higher efficiencies.

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™ Power MOSFET
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N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
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