STK22N05 Даташит - STMicroelectronics
производитель
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 0.048 Ω
■ AVALANCHE RUGGEDNESS TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Номер в каталоге
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производитель
N-Channel Enhancement Mode Power MOS Transistor
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics