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SST36VF1601E-70-4C-B3KE Даташит - Silicon Storage Technology

SST36VF1601E image

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SST36VF1601E-70-4C-B3KE

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производитель
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Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.


FEATURES:
• Organized as 1M x16 or 2M x8
• Dual Bank Architecture for Concurrent Read/Write Operation
  – 16 Mbit Bottom Sector Protection
     - SST36VF1601E: 12 Mbit + 4 Mbit
  – 16 Mbit Top Sector Protection
      - SST36VF1602E: 4 Mbit + 12 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
   – Endurance: 100,000 cycles (typical)
   – Greater than 100 years Data Retention
• Low Power Consumption:
   – Active Current: 6 mA typical
   – Standby Current: 4 µA typical
   – Auto Low Power Mode: 4 µA typical
• Hardware Sector Protection/WP# Input Pin
   – Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high
• Hardware Reset Pin (RST#)
   – Resets the internal state machine to reading array data
• Byte# Pin
   – Selects 8-bit or 16-bit mode
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Chip-Erase Capability
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
   – SST: 128 bits
   – User: 128 bits
• Fast Read Access Time
   – 70 ns
• Latched Address and Data
• Fast Erase and Program (typical):
   – Sector-Erase Time: 18 ms
   – Block-Erase Time: 18 ms
   – Chip-Erase Time: 35 ms
   – Program Time: 7 µs
• Automatic Write Timing
    – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
   – Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-ball TFBGA (6mm x 8mm)
   – 48-lead TSOP (12mm x 20mm)
• All non-Pb (lead-free) devices are RoHS compliant

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производитель
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