SSS3N80A Даташит - Samsung
производитель
![Samsung](/logo/Samsung.png)
Samsung
![Samsung](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 25 μA (Max.) @ VDS = 800V
■ Lower RDS(ON) : 3.800 Ω (Typ.)
Номер в каталоге
Компоненты Описание
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производитель
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor