SSM6J503NU Даташит - Toshiba
Номер в каталоге
SSM6J503NU
производитель
![Toshiba](/logo/Toshiba.png)
Toshiba
![Toshiba](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: RDS(ON) = 89.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V)
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba