SM341 Даташит - Polyfet RF Devices
производитель
![Polyfet-RF](/logo/Polyfet-RF.png)
Polyfet RF Devices
![Polyfet-RF](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
150.0 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Номер в каталоге
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производитель
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices