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NTHD3101F(2006) Даташит - ON Semiconductor

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NTHD3101F

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7 Pages

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136.9 kB

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ONSEMI
ON Semiconductor ONSEMI

Power MOSFET and Schottky Diode
−20 V, FETKY, P−Channel, −4.4 A, with
4.1 A Schottky Barrier Diode, ChipFET


FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low VF Schottky
• Pb−Free Packages are Available


APPLICATIONs
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products


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