Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.

FEATUREs:

High DC Current Gain: hFE= 1000 (Min) @ IC= 25A
                               hFE= 400 (Min) @ IC= 50A

Diode Protection to Rated IC

Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

Junction Temperature to +200°C