MRF148 Даташит - New Jersey Semiconductor
производитель
![NJSEMI](/logo/NJSEMI.png)
New Jersey Semiconductor
![NJSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
• IMD(d3) (30 WPEP) 35dB(Typ)
• IMD(dii)(30WPEP) — -60dB(Typ)
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
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