K3109 Даташит - TY Semiconductor
производитель
![Twtysemi](/logo/Twtysemi.png)
TY Semiconductor
![Twtysemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Features
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A)
Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
Номер в каталоге
Компоненты Описание
View
производитель
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics