High Current Power MOSFET

N-Channel Enhancement Mode

FEATUREs
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
   rated
• Low package inductance
   - easy to drive and to protect

Advantages
• Easy to mount
• Space savings
• High power density