Номер в каталоге
IXTC200N10T
Компоненты Описание
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Inchange Semiconductor
IXTC200N10T Даташит - Inchange Semiconductor
Inchange Semiconductor
• FEATURES
• Static drain-source on-resistance:
RDS(on) ≤ 6.3mΩ@VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
• APPLICATION
• DC/DC Converters
• High Speed Power Switching Applications
Номер в каталоге
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