Номер в каталоге
IXTC200N10T
Компоненты Описание
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TrenchMV™ Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
FEATUREs
• Silicon chip on Direct-Copper Bond
(DCB) substrate
• Isolated mounting surface
• 2500V electrical isolation
Advantages
• Easy to mount
• Space savings
• High power density
APPLICATIONs
• Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
• DC/DC Converters and Off-line UPS
• Primary - Side Switch
• High Current Switching Applications