IXTA86N20T Даташит - IXYS CORPORATION
Номер в каталоге
IXTA86N20T
производитель
![IXYS](/logo/IXYS.png)
IXYS CORPORATION
![IXYS](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Trench Gate Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
FEATUREs
• International standard packages
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
Номер в каталоге
Компоненты Описание
View
производитель
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate MOSFET
Fuji Electric
Trench Gate Power MOSFET HiperFET™
IXYS CORPORATION