High Current Power MOSFET
N-Channel Enhancement Mode

FEATUREs
• International standard package
• Isolation voltage 3000V (RMS)
• Low RDS (on) HDMOSTM processl
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance (<60 pF)
    - reduced RFI
• Low package inductance (< 10 nH)
    - easy to drive and to protect
• Aluminium Nitride Isolation
    - increased current ratings

APPLICATIONs
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode power supplies

Advantages
• Easy to mount
• Space savings
• High power density