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IS62VV51216LL-70M Даташит - Integrated Silicon Solution

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IS62VV51216LL-70M

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10 Pages

File Size
75.3 kB

производитель
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS62VV51216LL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.


FEATURES
• High-speed access time: 70, 85 ns
• CMOS low power operation
   – 36 mW (typical) operating
   – 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in 48-pin mini BGA (7.2mm x 8.7mm)

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Компоненты Описание
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производитель
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 
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512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM ( Rev : 2009 )
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512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
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Integrated Silicon Solution
256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM ( Rev : 2002 )
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Integrated Silicon Solution
256K x 16 1.8V ULTRA LOW POWER CMOS STATIC RAM
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Integrated Circuit Solution Inc
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Integrated Silicon Solution
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Integrated Silicon Solution
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Integrated Circuit Solution Inc

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