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IRFZ44N Даташит - New Jersey Semiconductor

IRFZ44N image

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IRFZ44N

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2 Pages

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72.3 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.


FEATURES
• Drain Current -ID=49A@ TC=25°C
• Drain Source Voltage-
   : VDSS= 55V(Min)
• Static Drain-Source On-Resistance
   : RDs(on) = 0.032 Q (Max)
• Fast Switching

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