Description
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.

Absolute Maximum Ratings
• Maximum Temperatures
    Storage Temperature............................................................................................ -50 ~ +150 °C
    Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
    Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
    VCBO Collector to Base Voltage ....................................................................................... 160 V
    VCEO Collector to Emitter Voltage.................................................................................... 160 V
    VEBO Emitter to Base Voltage .............................................................................................. 5 V
    IC Collector Current........................................................................................................ 100 mA