Description
The H2N6668 is designed for general-purpose amplifier and switching applications.

Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
   Storage Temperature ............................................................................................... -55~+150°C
   Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
   Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
• Maximum Voltages and Currents
   BVCBO Collector to Base Voltage..................................................................................... -80 V
   BVCEO Collector to Emitter Voltage.................................................................................. -80 V
   BVEBO Emitter to Base Voltage.......................................................................................... -5 V
   IC Collector Current........................................................................................................... -10 A