GENERAL DESCRIPTION
The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.
FEATURES
• Single power supply operation
- Full voltage range:1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
• Uniform Sector Architecture:
- 512 sectors of 2-Kword
- 32 blocks of 32-Kword
- Any sector or block can be erased individually
• WP#/ACC Input pin:
- Write protect (WP#) function allows protection
the first or last blocks, regardless of block
protect status
- Acceleration (ACC) function acceleration
program timing.
• Block Group protection:
- Hardware locking of blocks to prevent
program or erase operations within individual
blocks
- Additionally, temporary Block Unprotect
allows code changes in previously locked
blocks.
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 90ms typical
- Block erase time: 180ms typical
- Chip erase time: 4s typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector, Block and Chip Erase
• Chip Unprotect Mode
• Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI)
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
• Industrial temperature Range