D1143 Даташит - Inchange Semiconductor
производитель
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
◾ High Breakdown Voltage-
: VCBO= 1500V (Min)
◾ Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5A
◾ Built-in Damper Diode
◾ Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
◾ Designed for horizontal deflection output applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor