CP289 Даташит - Central Semiconductor
производитель
![Central-Semiconductor](/logo/Central-Semiconductor.png)
Central Semiconductor
![Central-Semiconductor](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
PROCESS DETAILS
Die Size 167 x 167 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 59 x 29 MILS
Emitter Bonding Pad Area 64 x 28 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
Номер в каталоге
Компоненты Описание
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