CP283 Даташит - Central Semiconductor
производитель
Central Semiconductor
PROCESS DETAILS
Die Size 68 x 68 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 18 x 11 MILS
Emitter Bonding Pad Area 18 x 12 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
Номер в каталоге
Компоненты Описание
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