CP268 Даташит - Central Semiconductor
производитель
![Central-Semiconductor](/logo/Central-Semiconductor.png)
Central Semiconductor
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PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 63 x 63 MILS
Die Thickness 10 MILS
Base Bonding Pad Area 9 x 12 MILS
Emitter Bonding Pad Area 10 x 18 MILS
Top Side Metalization Al - 16,000Å
Back Side Metalization Au - 12,000Å
Номер в каталоге
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