BS108 Даташит - General Semiconductor
производитель
![GE](/logo/GE.png)
General Semiconductor
![GE](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
FEATURES
♦ High breakdown voltage
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
♦ Specially suited for telephone subsets
Номер в каталоге
Компоненты Описание
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производитель
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor