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BLF8G27LS-100V Даташит - NXP Semiconductors.

BLF8G27LS-100V image

Номер в каталоге
BLF8G27LS-100V

Компоненты Описание

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page
14 Pages

File Size
191.8 kB

производитель
NXP
NXP Semiconductors. NXP

General description
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth (110 MHz typical)
■ Designed for broadband operation (2500 MHz to 2700 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the
   2500 MHz to 2700 MHz frequency range


Номер в каталоге
Компоненты Описание
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