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BLC8G27LS-160AV Даташит - NXP Semiconductors.

BLC8G27LS-160AV image

Номер в каталоге
BLC8G27LS-160AV

Компоненты Описание

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page
14 Pages

File Size
198.2 kB

производитель
NXP
NXP Semiconductors. NXP

General description
160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC


APPLICATIONs
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   2496 MHz to 2690 MHz frequency range


Номер в каталоге
Компоненты Описание
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