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BF998WR,115 Даташит - NXP Semiconductors.

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Номер в каталоге
BF998WR,115

Компоненты Описание

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page
13 Pages

File Size
253.5 kB

производитель
NXP
NXP Semiconductors. NXP

DESCRIPTION
Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS
• VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

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Номер в каталоге
Компоненты Описание
PDF
производитель
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N-channel dual-gate MOS-FET
Philips Electronics
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Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
NXP Semiconductors.
N-channel dual-gate MOS-FET
Philips Electronics

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