AP9468GP-HF Даташит - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Номер в каталоге
AP9468GP-HF
производитель
![DOINGTER](/logo/DOINGTER.png)
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
![DOINGTER](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs:
1) VDS=40V,ID=120A,RDS(ON)<4mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Номер в каталоге
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производитель
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified